维也纳科技大学PhD Position in Robust low-ohmic contacts to 4H-SiC by tailored interface engineering申请条件要求-申请方
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维也纳科技大学
PhD直招介绍
PhD Position Robust low-ohmic contacts to 4H-SiC by tailored interface engineering
TU Wien is located in the heart of Europe, in a cosmopolitan city of great cultural diversity. Our identity as a research university means building our reputation through research. TU Wien combines basic and applied research and research-oriented teaching at the highest level. The group of Prof. Ulrich Schmid at the Institute of Sensor and Actuator Systems invites applications for a 3.5-year PhD position (starting April 2025) in the field of robust low ohmic contacts to silicon carbide (4H-SiC).
The Project
Due to outstanding properties in comparison to silicon, such as a large bandgap ensuring a high electric breakdown strength and a high thermal conductivity, silicon carbide (SiC) is regarded as one of the most promising wide band gap semiconductors for future high power and high-frequency electronic applications. Besides these well-known material parameters, advanced device architectures request novel approaches for fabrication. Especially robust low ohmic contacts to 4H-SiC are essential for modern power devices because they ensure optimal electrical conductivity. This is crucial for efficient performance in high-voltage applications such as fast charging stations or solar/traction inverters. Additionally, reliable low ohmic contacts minimise contact resistance and heat generation, enhancing power electronic systems' overall energy efficiency and reliability. Within the frame of an interdisciplinary research project, including seven researchers and one industrial partner, our goal is to exploit the full potential of 4H-SiC by investigating novel material combinations and surface pre-conditioning techniques for low-ohmic contact formation. The PhD will acquire knowledge about different thin layer deposition and surface preconditioning techniques. By tailoring the interface, the realisation of reliable, low ohmic contacts to 4H-SiC substrates is targeted in a state-of-the-art cleanroom environment. Their electrical, structural, and chemical properties are evaluated by characterising test structures and devices. Even more, the impact of bulk substrate properties such as the doping concentration, is also in the focus of this study to gain an in-depth understanding of key parameters in low-ohmic contact formation on 4H-SiC. For more information about the project, please contact the principal investigator (PI), Dr. Georg Pfusterschmied (georg.pfusterschmied@tuwien.ac.at).
We Offer
The successful candidate will work in Prof. Ulrich Schmid's group under Dr. Georg Pfusterschmied's guidance as PI at the Institute of Sensor and Actuator Systems in Vienna's centre. The institute offers an international environment and excellent infrastructure. You can find more information about the group and the institute at https://mst.isas.tuwien.ac.at/home/ . In addition, we offer
Continuing personal and professional education and flexible working hours
The central location of the workplace with excellent accessibility (U1/U4 Karlsplatz)
A creative environment in one of the most livable cities in the world
Additional benefits for employees can be found at the following link Fringe-Benefit Catalogue of TU Wien
Candidates are not eligible for a refund of expenses for travelling and lodging related to the application process. TU Wien intends to increase the number of women on its faculty and, therefore, specifically invites applications by women. Among equally qualified applicants, women will receive preferential consideration.
维也纳科技大学 PhD Position in Robust low-ohmic contacts to 4H-SiC by tailored interface engineering项目有没有奖学金，是不是全奖Phd招生，下面我们一起看一下【大学名称】Phd的奖学金资助情况
项目资助情况
A highly competitive salary (Salary of the position is according to the collective labour agreement for employees at universities, salary group B1, based on 31 hours per week, a gross salary of currently EUR 40,305 per year)
维也纳科技大学Phd申请条件和要求都有哪些？PhD Position in Robust low-ohmic contacts to 4H-SiC by tailored interface engineering项目是不是全奖？有没有奖学金？下面我们一起看一下维也纳科技大学申请Phd直招需要具备哪些条件和要求，以及托福、雅思语言成绩要到多少才能申请。
申请要求
For this most ambitious project, we are looking for a motivated PhD student fulfilling these requirements:
MSc degree or comparable degree in electrical engineering, physics or a related subject
A solid background in semiconductor physics and electrical semiconductor measurement techniques is a strong plus.
Knowledge of micro- and nanofabrication and thin film deposition/analysis is beneficial.
Organisational and analytical skills, as well as a structured way of working.
Solid written and oral communication skills in English.
报名方式
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联系人
邮箱：phd3662@tuwien.ac.at
招生人信息
Georg Pfusterschmied
邮箱：georg.pfusterschmied@tuwien.ac.at
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